Systems for cooling RF heated chamber components

ABSTRACT

In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.17/084,103 filed on Oct. 29, 2020 entitled “SYSTEMS FOR COOLING RFHEATED CHAMBER COMPONENTS”, which is a continuation of Ser. No.15/969,583 filed on May 2, 2018 entitled “SYSTEMS FOR COOLING RF HEATEDCHAMBER COMPONENTS” which is a continuation of U.S. application Ser. No.13/292,649 filed on Nov. 9, 2011 entitled “SYSTEMS FOR COOLING RF HEATEDCHAMBER COMPONENTS” which claims the benefit of U.S. ProvisionalApplication No. 61/544,799, filed Oct. 7, 2011, entitled “SYSTEMS FORCOOLING RF HEATED CHAMBER COMPONENTS.” The foregoing applications arehereby incorporated by reference in their entireties.

TECHNICAL FIELD

The present specification generally relates to plasma processing devicescomprising devices for cooling, more specifically, relates to plasmaprocessing devices comprising devices for cooling a dielectric window.

BACKGROUND

Plasma processing devices can be utilized to etch material away from asubstrate formed from, for example, a semiconductor or glass. Plasmaprocessing devices may contain a vacuum chamber that encloses plasmaprocessing gases, which can be ionized and transformed into plasma. Forexample an energized source (radio frequency (RF), microwave or othersource) can apply energy to the process gas to generate the plasma. Insome plasma processing devices, the energy can be transmitted through adielectric window that is formed through the vacuum chamber.Accordingly, the dielectric window can be subjected to heating inducedby the electromagnetic energy. Moreover, the heating can be localized tospecific regions of the dielectric window due to variations inelectromagnetic energy caused by process conditions. There can be twosources of heating of the dielectric window. First, the dielectricproperties of the window (tangent-δ) may result in the direct absorptionof RF or microwave power. Second, the plasma created by the energizedsource can indirectly heat the window. Moreover, the heating can beevenly distributed across the dielectric window or localized to specificregions of the window due to the design of the source (antennaconstruction, etc) and plasma conditions.

Heat energy can be removed from dielectric windows passively (i.e. nocooling device) or with a cooling device such as a liquid cooling systemor a fan cooling system. Liquid cooling systems can be efficient but aremore expensive than passive cooling or fan cooling systems. Moreover,liquid cooling systems are more difficult to implement in an environmentsubjected to electromagnetic energy. For example liquid cooling cancause localized cooling resulting in thermal gradients and thermalcracking. The dielectric properties for the liquid are different to thesurrounding ceramic resulting in non-uniform transmission of the RFpower. For example, the liquid may be conducting which would result inthe dissipation of RF power within the liquid. The liquid may be subjectto nucleation and can be difficult to contain within the cooling system.

Fan cooling systems can be utilized for cooling of dielectric windowssuch as, for example, via convection. However, fan cooling systems canbe inefficient and difficult to apply to localized regions of relativelyhigh heat load induced by the energized source in a dielectric window.Specifically, fan cooling systems suitable for use with plasmaprocessing devices are ineffective for heat removal when subjected tohigh back pressure. For example, fan cooling systems may stall and failto provide sufficient air flow for cooling when subjected to backpressures of about 0.5 in-H₂O or more.

Accordingly, a need exists for alternative devices for coolingdielectric windows of plasma processing devices.

SUMMARY

In one embodiment, a plasma processing device may include a dielectricwindow, a vacuum chamber, an energized source, a plenum and at least oneair amplifier. The dielectric window may include a plasma exposedsurface and an air exposed surface. The vacuum chamber can be coupledwith the dielectric window. The vacuum chamber and the plasma exposedsurface of the dielectric window can cooperate to enclose a plasmaprocessing gas. The energized source can be disposed inside or outsideof the vacuum chamber. The energized source can transmit energy throughthe dielectric window and into the vacuum chamber. The electromagneticenergy can form an elevated temperature region in the dielectric windowand can transform at least a portion of the plasma processing gas intoplasma. The at least one air amplifier can be in fluid communicationwith the air exposed surface of the dielectric window. The at least oneair amplifier can operate at a back pressure of at least about 1 in-H2Oand can provide at least about 30 cfm of air.

In another embodiment, a plasma processing device may include adielectric window, a vacuum chamber, an energy source, a plenum, and atleast one air amplifier. The dielectric window may include a plasmaexposed surface and an air exposed surface. The vacuum chamber can becoupled with the dielectric window. The vacuum chamber and the plasmaexposed surface of the dielectric window can cooperate to enclose aplasma processing gas. The energy source can be disposed outside of thevacuum chamber. The energy source can transmit electromagnetic energythrough the dielectric window and into the vacuum chamber such that theelectromagnetic energy forms an elevated temperature region in thedielectric window to transform at least a portion of the plasmaprocessing gas into a plasma. The plenum can be in fluid communicationwith the air exposed surface of the dielectric window. The plenum can bedisposed over the elevated temperature region of the dielectric window.The at least one air amplifier can be in fluid communication with theplenum. The at least one air amplifier can pressurize the plenum to aback pressure of at least about 2 in-H2O and provides at least about 30cfm of air.

These and additional features provided by the embodiments describedherein will be more fully understood in view of the following detaileddescription, in conjunction with the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments set forth in the drawings are illustrative and exemplaryin nature and not intended to limit the subject matter defined by theclaims. The following detailed description of the illustrativeembodiments can be understood when read in conjunction with thefollowing drawings, where like structure is indicated with likereference numerals and in which:

FIG. 1 schematically depicts a plasma processing device according to oneor more embodiments shown and described herein;

FIG. 2 schematically depicts a plenum according to one or moreembodiments shown and described herein;

FIG. 3 schematically depicts a plenum segment according to one or moreembodiments shown and described herein;

FIG. 4 schematically depicts an air amplifier according to one or moreembodiments shown and described herein;

FIG. 5A schematically depicts a cross sectional view taken along line5-5 of FIG. 1 according to one or more embodiments shown and describedherein;

FIG. 5B schematically depicts a cross sectional view taken along line5-5 of FIG. 1 according to one or more embodiments shown and describedherein;

FIG. 6A schematically depicts a dielectric window according to one ormore embodiments shown and described herein; and

FIG. 6B schematically depicts a dielectric window according to one ormore embodiments shown and described herein.

DETAILED DESCRIPTION

FIG. 1 generally depicts one embodiment of a plasma processing devicefor etching materials from and/or depositing materials onto substrates.The plasma processing device generally comprises a vacuum chamber, adielectric window sealing an opening in the vacuum chamber, an energysource, and at least one air amplifier. Various embodiments of theplasma processing device and the operation of the plasma processingdevice will be described in more detail herein.

Referring now to FIG. 1 , the plasma processing device 100 comprises avacuum chamber 20 for enclosing plasma processing gases and plasmaduring the processing of a substrate 24. The vacuum chamber 20 can beformed from a metallic material that can be set to a referencepotential. A substrate 24 can be located within the vacuum chamber 20for processing. For example, the substrate can be clamped in place witha chuck device (not depicted in FIG. 1 ). The vacuum chamber 20 can bemaintained at a wide pressure range such as, for example, about 1-1000mTorr, or about 100 MTorr to about 200 mTorr in embodiments for throughsilicon via etching. The vacuum chamber 20 can enclose plasma processinggases, which may comprise halogens or halogen elements such as, forexample, fluorine (F), chlorine (Cl), bromine (Br), iodine (I), andastatine (At). Moreover, specific process gases may include CClF₃, C₄F₈,C₄F₆, CHF₃, CH₂F₃, CF₄, HBr, CH₃F, C₂F₄, N₂, O₂, Ar, Xe, He, H₂, NH₃,SF₆, BCl₃, Cl₂, and other gases capable of being ionized.

The plasma processing device 100 comprises a dielectric window 10through which electromagnetic energy can be transmitted. The dielectricwindow 10 comprises a plasma exposed surface 12 configured to be exposedto the interior of the vacuum chamber 20 and an air exposed surface 14.The dielectric window 10 is formed from a dielectric material thattransmits electromagnetic energy such as, electromagnetic energy havinga frequency range of 100 kHz to 100 MHz. Suitable dielectric materialsinclude quartz and ceramics comprising, for example, Aluminum nitride(AlN), Aluminum oxide (Al₂O₃), or any other refractory material havingsimilar transmissive properties.

The plasma processing device 100 comprises an energy source 30 forgenerating electromagnetic energy sufficient to ionize the plasmaprocessing gases. The energy source 30 can include an inner coil 32 andan outer coil 34. Each of the inner coil 32 and the outer coil 34 isdepicted in FIG. 1 as being formed from a continuous substantiallyrectangular shaped conductor having radially concentric andsubstantially circular spirals. It is noted that the energy source 30can include coils formed in any shape suitable to generateelectromagnetic energy such as, for example, faceted concentric segmentsconcentric segments that are formed at angular turns with respect to oneanother, solenoid shaped conductors, toroid shaped conductors orcombinations thereof.

The energy source 30 can be capable of generating electromagnetic energyover a wide range of powers such as, for example in some embodimentsabout 50 W to about 20 kW, in one embodiment greater than about 2 kW, inanother embodiment about 3 kW, or in yet another embodiment about 4.5kW. In some embodiments, the inner coil 32 and the outer coil 34 areconductively coupled with one another. In other embodiments multiplecoils can be powered by multiple RF generators. It is noted that, whilethe energy source 30 is depicted as a multi-coiled RF source, the energysource can be any device capable of generating electromagnetic energy togenerate an inductively coupled plasma such as, but not limited to, aradio frequency (RF) source, electron cyclotron resonance (ECR), amicrowave horn, slotted antennae, or helicon sources, which use a spiralantenna wrapped around a cylindrical window.

Referring collectively to FIGS. 1 and 2 , the plasma processing device100 may optionally comprise a plenum 40 for directing a substantiallyuniform flow of cooling air over the dielectric window 10. The plenum 40is formed into a partial enclosure and comprises one or more inlets 42and one or more outlets 44. Accordingly, cooling air can be received byan inlet 42 of the plenum 40 and introduced into a pressure regionhaving a back pressure that is at least partially surrounded by theplenum 40. The plenum 40 can be divided into a plurality of segments 46by partition walls 48, such that each segment comprises at least oneinlet 42 and at least one outlet 44. It is noted that, while the plenum40 is depicted as being substantially ring shaped in FIGS. 1 and 2 , theplenum 40 can be formed into any shape suitable to provide cooling airto a heated region of the dielectric window 10, as is described ingreater detail herein. The plenum 40 can be formed from passive materialsuch as, for example, polytetrafluoroethylene (PTFE or “teflon”),polyether ether ketone (PEEK), polyetherimide (PEI or “ultem”),ceramics, or any other electromagnetic energy transmissive material.

The plenum 40 can be formed as a single piece or as multiple segmentsthat can be united with one another. Specifically, as depicted in FIG. 3, a plenum segment 140 may include a plurality of outlets 144 formed inthe plenum segment 140. The plenum segment 140 may be substantiallywedge-shaped and configured to combine with additional plenum segments140 to enclose a substantially cylindrically shaped region or asubstantially ring shaped region. It is noted, that the plenumsdescribed herein can be provided in any shape suitable to cooperate withthe energy source 30 and provide pressurized cooling flow to thedielectric window 10 or a desired region thereof.

Referring now to FIG. 4 , plasma processing device 100 comprises atleast one air amplifier 60 for providing air to the plenum 40 (FIG. 1 ).Each air amplifier 60 comprises an inlet 62 for receiving input air 72,an exhaust 64 for outputting cooling air 70 and a control input 66 forreceiving pressurized air 68 (e.g., clean dry air). Without being boundto any specific theory, it is believed that pressurized air 68 injectedinto the control input 66 provides a relatively large amount of coolingair 70, as compared to the pressurized air 68, in accordance withBernoulli's principle and the Coanda effect. Specifically, thepressurized air 68 can be injected through the control input 66 and intoring shaped nozzle 74. The pressurized air 68 can travel through thering shaped nozzle 74 and enter the air amplifier 60 at a relativelyhigh velocity compared to the air outside of the air amplifier 60. Thepressurized air 68 can be directed towards the exhaust 64 of the airamplifier 60. In accordance with the Coanda effect, the pressurized air68 may travel substantially along the annular boundary 76 of the airamplifier 60.

The pressurized air 68 can entrain the surrounding air and generate arelatively low pressure region compared to the air surrounding the inlet62 of the air amplifier 60. The pressurized air 68 may cause input air72 to be pulled into the air amplifier 60 due to entrainment, thepressure differential, or a combination thereof. Accordingly, the airamplifier 60 can generate a relatively high amount of cooling air 70with respect to the pressurized air 68. Thus, the air amplifier 60 canprovide suitable air flow when supplied with pressurized air 68 having apressure from about 20 psig to about 100 psig such as, for example, inone embodiment about 25 psig to about 80 psig, in another embodimentabout 30 psig, or in another embodiment about 50 psig. The air amplifier60 can provide suitable amounts of cooling air 70 at a rate of at leastabout 20 cfm such as, for example, in one embodiment about 20 cfm toabout 3,000 cfm, in another embodiment about 25 cfm to about 900 cfm, inyet another embodiment about 30 cfm to about 230 cfm or in a furtherembodiment about 125 cfm to about 230 cfm.

Referring back to FIG. 1 , in one embodiment of the plasma processingdevice 100, the vacuum chamber 20 can be coupled to the dielectricwindow 10. For example, an opening of the vacuum chamber 20 can besealed at least in part by the dielectric window 10. Specifically, theplasma exposed surface 12 of the dielectric window 10 can be exposed toplasma and/or plasma processing gases during the operation of the plasmaprocessing device 100. It is noted that, while the dielectric window 10is depicted in FIG. 1 as being coupled to the top of the vacuum chamber20, the dielectric window 10 may seal any portion of the vacuum chamber20 suitable to receive electromagnetic energy. In some embodiments, theplasma processing device 100 may include a heater 26 for heatingportions of the dielectric window 10 and reducing stresses within thedielectric window 10.

The energy source 30 can be disposed outside of the vacuum chamber 20and adjacent to the dielectric window 10. A plenum 40 can be locatedadjacent to the energy source 30 and the dielectric window 10 such thatthe plenum 40 is in fluid communication with the air exposed surface 14of the dielectric window 10. Referring collectively to FIGS. 5A and 5B,the plenum 40 can be located between the inner coil 32 and the outercoil 34. In one embodiment, depicted in FIG. 5A, a portion of the plenum40 can contact the air exposed surface 14 of the dielectric window 10.In another embodiment, depicted in FIG. 5B, the plenum 40 can be offsetfrom the air exposed surface 14 of the dielectric window 10 by an offsetdistance D. The offset distance D can be any distance suitable topromote effective cooling of the dielectric window 10 such as, forexample, in one embodiment greater than about 0.25 mm, or in anotherembodiment about 2 mm.

During operation, the energy source 30 transmits electromagnetic energythrough the dielectric window 10 and into the vacuum chamber 20 totransform at least a portion of the plasma processing gas into plasma. Aportion of the electromagnetic energy is transformed into heat energythat can be absorbed by the dielectric window 10. Specifically, someelectromagnetic energy can be converted into heat according to thedielectric properties of the dielectric window 10 and a further portionof the electromagnetic energy can be absorbed by the dielectric window10 after it ionizes the plasma processing gases (e.g., the dielectricwindow 10 can be heated by the plasma via plasma exposed surface 12).Accordingly, the temperature of the dielectric window 10 can beincreased by the electromagnetic energy. In some embodiments, theelectromagnetic energy is anisotropic such that different portions ofthe dielectric window 10 are subjected to varying amounts ofelectromagnetic energy. It is believed that the heat induced in thedielectric window 10 can be correlated with the amount ofelectromagnetic energy transmitted through the dielectric window 10. Forexample, in the embodiments described herein greater than about 40% ofthe electromagnetic energy can be absorbed as heat by the dielectricwindow 10. The dielectric window can absorb at least about 0.4 kW ofelectromagnetic energy as heat such as, for example, in one embodimentgreater than about 1 kW, in another embodiment about 1.5 kW, or in yetanother embodiment about 2.25 kW. Accordingly, an elevated temperatureregion 16 (hot spot) can be formed in the portion of the dielectricwindow 10 that is subjected to a relatively high amount of heat inducedby the electromagnetic energy with respect to the other portions of thedielectric window 10.

The plenum 40 can be disposed over the elevated temperature region 16 ofthe dielectric window 10. The elevated temperature region 16 can includeany region of the dielectric window 10 having a temperature duringprocessing that exceeds the average temperature of the dielectric window10 while plasma is generated within the vacuum chamber 20. The elevatedtemperature region 16 may include the portion of the dielectric window10 having the peak temperature during operation. Alternatively oradditionally, the elevated temperature region 16 may include the portionof the dielectric window 10 having the highest average temperature. Inembodiments comprising an inner coil 32 and an outer coil 34, theelevated temperature region 16 may be located in portion of thedielectric window 10 located immediately beneath the gap between theinner coil 32 and the outer coil 34. In embodiments without a plenum,the at least one air amplifier 60 (FIG. 4 ) can be in direct fluidcommunication with the elevated temperature region 16 of the dielectricwindow 10.

Referring back to FIG. 1 , at least one air amplifier 60 is in fluidcommunication with the plenum 40. Specifically, the plasma processingdevice 100 can have one or more ducts 50. The one or more ducts 50 canbe formed from passive material such as, for example, teflon, PEEK,ultem, ceramics, or any other electromagnetic energy transmissivematerial. Each duct 50 may include an amplifier orifice 52 in fluidcommunication with the exhaust 64 of an air amplifier 60 and a plenumorifice 54 in fluid communication with an inlet 42 of the plenum 40.Accordingly, the air amplifier 60 can supply cooling air to thedielectric window 10 via a duct 50 and plenum 40. It is noted that,while FIG. 1 depicts four air amplifiers 60 and four ducts 50, theplasma processing device 100 can have any number of air amplifiers 60and ducts 50 sufficient to provide adequate cooling to the dielectricwindow 10.

Air supplied to the plenum 40 can be purged passively. For example, theplenum 40 can be housed within a pressure controlled chamber 22. Thepressure controlled chamber 22 can be maintained at a pressure that islower than ambient pressure and the outlet 44 of the plenum 40 can purgeair directly into the pressure controlled chamber 22. The purged air canbe removed from the pressure controlled chamber 22 via an exhaust system(not depicted in FIG. 1 ). In another embodiment, the pressurecontrolled chamber 22 can be maintained at a pressure that is higherthan ambient pressure and the outlet 44 of the plenum 40 can purge airdirectly into the pressure controlled chamber 22. The purged air can beremoved from the pressure controlled chamber 22 via vents (not depictedin FIG. 1 ). In further embodiments, the plenum can be in fluidcommunication with exhaust ducting (not depicted in FIG. 1 ) topassively purge air outside of the plasma processing device 100.

Additionally or alternatively, air can be actively purged from theplenum 40. For example, one or more air amplifiers 60 can be in fluidcommunication with the plenum 40 and configured to remove air from theplenum 40. Accordingly, while FIG. 1 depicts the ducts 50 in an inputonly arrangement, the ducts 50 can be configured to provide air and/orremove air from the plenum 40. Moreover, while FIG. 1 depicts the airamplifiers 60 as providing air to the plenum 40, the inlet 62 of an airamplifier 60 can be in communication with the outlet 44 of the plenum 40to remove air from the plenum 40.

In some embodiments, at least one air amplifier can be used without aplenum. For example, referring collectively to FIGS. 6A and 6B, the atleast one air amplifier 60 can be in fluid communication with the airexposed surface 14 of the dielectric window 10 without the use of aplenum. Specifically, FIG. 6A schematically depicts one embodiment wherethe at least one air amplifier 60 is oriented perpendicularly withrespect to the air exposed surface 14 of the dielectric window 10.Accordingly, the exhaust 64 of the at least one air amplifier 60 can beoriented with respect to the dielectric window 10, such that the coolingair 70 flows along a path that is substantially perpendicular to the airexposed surface 14 of the dielectric window 10. In another embodiment,depicted in FIG. 6B, the at least one air amplifier 60 is oriented at anoblique angle α with respect to the air exposed surface 14 of thedielectric window 10. Accordingly, the exhaust 64 of the at least oneair amplifier 60 can be oriented with respect to the dielectric window10, such that the cooling air 70 flows along a path that is aligned withthe air exposed surface 14 of the dielectric window 10 at an obliqueangle α. It is noted that, while the oblique angle α is depicted in FIG.6B as being from about 25° to about 35°, the oblique angle α can be anyangle suitable to control to temperature of the dielectric window 10.

As is noted above, the injection of cooling flow with at least one airamplifier 60 can generate substantial amounts of back pressure, whichcan inhibit the flow of air towards the dielectric window 10. Accordingto the embodiments described herein, the plenum 40 generally ispressurized to a back pressure of at least about 1 in-H₂O such as, forexample, in one embodiment greater than about 2 in-H₂O. Furthermore, itis noted that back pressure is not required for the operation of airamplifiers 60.

For example, a self-consistent air flow and energy conservationmulti-physics model was utilize to calculate the correlation between theair output provided per air amplifier and the back pressure in theplenum. The model included four air amplifiers which supplied coolingair via ducts to a single plenum. The results were determined using anoffset plenum and a flush plenum. The results from the model aresummarized below in Table 1.

TABLE 1 Plenum Spacing air per air amplifier Back Pressure (mm) (cfm)(in-H₂O) flush 30 4.475 flush 30 4.068 flush 90 38.64 flush 90 33.36flush 125 72.4 flush 125 62.65 2 30 2.85 2 30 2.44

The model results indicate the plenum is pressurized to a back pressureof at least about 2.4 in-H₂O for an output of 30 cfm per air amplifier.Moreover, the model results demonstrate that, generally, back pressureand air flow are correlated. Specifically, with an increase in outputflow from the air amplifier the back pressure (flow resistance) offeredby the plenum increases.

It should now be understood that air amplifiers can be utilized with avariety of air channeling plenum designs to control the temperature ofdielectric windows. Moreover, the model data indicates that airamplifiers are capable of providing relatively high rates of cooling airto dielectric windows with the aid of plenums even when subjected toback pressures sufficient to stall fan cooling systems. Accordingly, theembodiments described herein may be utilized to effectively cooldielectric windows that are subjected to electromagnetic energy inexcess of about 3 kW such as, for through silicon via etching processes.Moreover, the embodiments described herein may be utilized toeffectively cool dielectric windows that are subjected to other types ofelectromagnetic energy such as, for etch processes, chemical vapordeposition, oxide etching, metal etching, and the like.

It is noted that the terms “substantially” and “about” may be utilizedherein to represent the inherent degree of uncertainty that may beattributed to any quantitative comparison, value, measurement, or otherrepresentation. These terms are also utilized herein to represent thedegree by which a quantitative representation may vary from a statedreference without resulting in a change in the basic function of thesubject matter at issue.

While particular embodiments have been illustrated and described herein,it should be understood that various other changes and modifications maybe made without departing from the spirit and scope of the claimedsubject matter. Moreover, although various aspects of the claimedsubject matter have been described herein, such aspects need not beutilized in combination. It is therefore intended that the appendedclaims cover all such changes and modifications that are within thescope of the claimed subject matter.

What is claimed is:
 1. A plasma processing device comprising: adielectric window comprising a plasma exposed surface and an air exposedsurface; a vacuum chamber coupled with the dielectric window, whereinthe vacuum chamber and the plasma exposed surface of the dielectricwindow cooperate to enclose a plasma processing gas, wherein thedielectric window seals an opening of the vacuum chamber; an energysource positioned adjacent to the dielectric window, wherein the energysource transmits electromagnetic energy through the dielectric windowand into the vacuum chamber such that the electromagnetic energy formsan elevated temperature region in the dielectric window and transformsat least a portion of the plasma processing gas into a plasma; at leastone air amplifier in fluid communication with the air exposed surface ofthe dielectric window; and a plenum in fluid communication with the airexposed surface of the dielectric window and the at least one airamplifier to receive cooling air from the at least one air amplifier,wherein the plenum is formed as multiple segments united with oneanother, wherein each segment comprises at least one inlet and at leastone outlet that outputs air directly into a pressure region partiallysurrounded by the plenum, wherein the at least one air amplifier isexternal to the plenum.
 2. The plasma processing device of claim 1,wherein the plenum is configured to combine with another plenum toenclose a substantially cylindrically shaped region or a substantiallyring shaped region.
 3. The plasma processing device of claim 1, whereinthe at least one air amplifier outputs at least about 30 cfm of air. 4.The plasma processing device of claim 1, wherein the at least one airamplifier outputs at least about 20 cfm of air.
 5. The plasma processingdevice of claim 1, wherein the plenum is disposed over the elevatedtemperature region of the dielectric window.
 6. The plasma processingdevice of claim 1, wherein the at least one air amplifier comprises acontrol input in fluid communication with a ring shaped nozzle.
 7. Theplasma processing device of claim 1, wherein the plenum is locatedwithin a pressure controlled enclosure and air is purged from at leastone outlet of the plenum to the pressure controlled enclosure.
 8. Theplasma processing device of claim 1, wherein the energy source comprisesan inner coil and an outer coil.
 9. The plasma processing device ofclaim 8, wherein the plenum is disposed between the inner coil and theouter coil.
 10. The plasma processing device of claim 1, wherein theplurality of segments is a plurality of substantially wedge-shapedsegments.
 11. The plasma processing device of claim 5, wherein theplenum is in contact with the dielectric window.
 12. The plasmaprocessing device of claim 5, wherein the plenum is offset from thedielectric window.
 13. A plasma processing device comprising: adielectric window comprising a plasma exposed surface and an air exposedsurface; a vacuum chamber coupled with the dielectric window, whereinthe vacuum chamber and the plasma exposed surface of the dielectricwindow cooperate to enclose a plasma processing gas; an energy sourcedisposed adjacent to the dielectric window, wherein the energy sourcetransmits electromagnetic energy through the dielectric window and intothe vacuum chamber such that the electromagnetic energy forms anelevated temperature region in the dielectric window and transforms atleast a portion of the plasma processing gas into a plasma; at least oneair amplifier in fluid communication with the air exposed surface of thedielectric window, wherein the at least one air amplifier comprises afirst inlet for receiving pressurized air at a first velocity and afirst volume, a second inlet for receiving ambient air at a secondvelocity, and an exhaust for outputting amplified air at a secondvolume, wherein the first velocity is greater than the second velocityand the first volume is less than the second volume; and a plenum influid communication with the air exposed surface of the dielectricwindow and the at least one air amplifier to receive cooling air fromthe at least one air amplifier, wherein the plenum is divided into aplurality of segments by partition walls that are shared by adjacentsegments and each segment comprises at least one inlet and at least oneoutlet, wherein the at least one air amplifier is external to theplenum, wherein at least one of the segments is substantiallywedge-shaped.
 14. The plasma processing device of claim 13, wherein theplenum is configured to combine with another plenum to enclose asubstantially cylindrically shaped region or a substantially ring shapedregion.
 15. The plasma processing device of claim 13, wherein the atleast one air amplifier outputs at least about 30 cfm of air and theplenum is pressurized to a back pressure of at least about 1 in-H2O. 16.The plasma processing device of claim 13, wherein the plenum is disposedover the elevated temperature region of the dielectric window.
 17. Theplasma processing device of claim 13, wherein the plenum has asubstantially annular shape.